unisonic technologies co., ltd ufp254 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd ver.a 23a, 250v n-channel power mosfet ? description the utc ufp254 is an n-channel mode power fet, it uses utc?s advanced technology. this technology allows a minimum on-state resistance, superior swit ching performance. it also can withstand high energy pulse in the avalanche and commutation mode. ? features * r ds(on) <140m ? @ v gs =10v,i d =14a * low gate charge (maximum 140nc) * high switching speed ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UFP254L-TF2-T ufp254g-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source
ufp254 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw ver.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 250 v gate-source voltage v gss 20 v continuous i d 23 a drain current pulsed i dm 92 a avalanche current i ar 23 a single pulsed e as 410 mj avalanche energy repetitive e ar 19 mj power dissipation p d 42 w junction temperature t j +150 c storage temperature range t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 250 v drain-source leakage current i dss v ds =250v 25 a forward v gs =+20v, v ds =0v +100 na gate-source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) i d =250a 2 4 v static drain-source on-state resistance r ds(on) v gs =10v, i d =14a 140 m ? dynamic parameters input capacitance c iss 2700 pf output capacitance c oss 620 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1mhz 180 pf switching parameters total gate charge q g 140 nc gate to source charge q gs 24 nc gate to drain charge q gd v dd =50v, v gs =10v , i d =1.3a 71 nc turn-on delay time t d(on) 15 ns rise time t r 63 ns turn-off delay time t d(off) 74 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? , v gs =0~10v 50 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 23 a maximum body-diode pulsed current i sm 92 a drain-source diode forward voltage v sd i s =23a, v gs =0v 1.8 v
ufp254 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw ver.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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